Oral Presentation

Development of a 300 GHz Amplifier based on InP HBT Technology

Author(s): Sooyeon Kim, Changyu Choi, Hyeonhak Jung, Ho-Jin Song, SeungHwan Kim and Seung-hyun Cho

Presenter: Sooyeon Kim (ETRI (electronics and telecommunications research institute))

Our research team is developing amplifiers for broadband communication applications in the 300 GHz frequency band. We developed an amplifier integrated circuit based on the 250nm InP HBT process, and the amplifier is packaged in a waveguide module. The amplifier to be developed is connected to the output of UTC-PD and used to increase the communication distance by amplifying the output of the transmitter.